 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| UNISONIC TECHNOLOGIES CO., LTD UBV45 HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC UBV45 is designed for use in Compact Fluorescent Lamps. NPN SILICON TRANSISTOR 1 TO-92 FEATURES * High Voltage Capability * Low Spread of Dynamic Parameters * Very High Switching Speed *Pb-free plating product number: UBV45L ORDERING INFORMATION Normal Order Number Lead Free Plating UBV45L-T92-B UBV45L-T92-K Package TO-92 TO-92 UBV45-T92-B UBV45-T92-K Pin Assignment 1 2 3 E C B E C B Packing Tape Box Bulk UBV45L-T92-B (1)Packing Type (2)Package Type (3)Lead Plating (1) B: Tape Box, K: Bulk (2) T92: TO-92 (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-081,c UBV45 ABSOLUTE MAXIMUM RATINGS (Ta = 25 PARAMETER Collector Emitter Voltage (VBE = 0) Collector Emitter Voltage (IB = 0) Emitter Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Ta = 25 NPN SILICON TRANSISTOR ) SYMBOL RATINGS UNIT VCES V 700 VCEO 400 V VEBO 9 V IC 0.75 A ICM 1.5 A IB 0.4 A IBM 0.75 A PD 0.95 W Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERAMAL DATA PARAMETER Thermal Resistance Junction-ambient SYMBOL JA RATINGS 130 UNIT /W ELECTRICAL CHARACTERISTICS (Ta= 25 , unless otherwise specified) SYMBOL TEST CONDITIONS VCEO(SUS)* IC = 1 mA IC = 0.2 A , IB = 40 mA Collector Emitter Saturation Voltage VCE(SAT)* IC = 0.3 A , IB = 75 mA IC = 0.4 A , IB = 135 mA IC = 0.2 A , IB = 40 mA Base Emitter Saturation Voltage VBE(SAT)* IC = 0.3 A , IB = 75 mA Emitter Cut off Current (IC = 0) IEBO VEB = 9 V Collector Cut off Current (VBE = -1.5V) ICEV VCE = 700 V IC = 0.2 A, VCE = 5 V DC Current Gain hFE* IC = 0.4 A, VCE = 5 V IC = 0.2 A , VCLAMP = 300 V Inductive Load Fall Time tF IB1 = -IB2 = 40 mA , L = 3 mH * Pulsed: Pulse duration = 300s, duty cycle = 1.5 % PARAMETER Collector Emitter Sustaining Voltage (IB = 0) MIN TYP MAX UNIT 400 V 0.2 0.5 V 0.3 1 0.4 1.5 1 V 1.2 1 mA 250 A 12 27 7 20 0.3 s INDUCTIVE LOAD SWITCHING TEST CIRCUIT (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier (3) LC I B1 (1) IC IB RBB(2) VBB + VCE VCLAMP Vcc UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R201-081,c UBV45 TYPICAL CHARACTERICS Safe Operating Area 101 4 2 NPN SILICON TRANSISTOR Derating Curve 140 120 10 0 80s 8 6 4 2 100 80 60 40 20 2 4 68 2 4 682 2 4 6 IC (A) 10 -1 8 6 4 2 300s 10-2 8 6 4 2 Continuous 10-3 10 0 PD (%) 10 1 10 10 3 0 25 50 75 100 ) 125 150 175 VCE (V) TCASE ( Collector Emitter Saturation Voltage hFE =5 1.2 10 TJ =125 1.1 Base Emitter Saturation Voltage hFE =5 VCE (SAT) (V) VBE (SAT) (V) TJ =-40 1.0 0.9 0.8 0.7 TJ =25 TJ =125 1 TJ =25 TJ =-40 0.1 0.01 0.1 I C (A) 0.6 0.1 IC (A) DC Current Gain VCE =1.5V DC Current Gain VCE =5V T J =125 TJ =125 10 h FE TJ =-40 TJ =25 hFE 10 TJ =25 TJ =-40 1 0.01 0.1 I C (A) 0.2 1 0.01 0.1 I C (A) 0.2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 4 QW-R201-081,c UBV45 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-081,c |
Price & Availability of UBV45L-T92-B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |